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zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 1 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated device status package part mark reel size (inches) tape width (mm) quantity per reel ZXGD3103N8TC production so8 zxgd3103 13 12 2500 description the zxgd3103 is intended to drive mosfets configured as ideal diode replacements. the device is comprised of a differential amplifier detector stage and high current driver. the detector monitors the reverse voltage of the mosfet such that if body diode conduction occurs a positive voltage is applied to the mosfet?s gate pin. once the positive voltage is applied to the gate the mosfet switches on allowing reverse current flow. the detectors? output voltage is then proportional to the mosfet drain-source reverse voltage drop and this is applied to the gate via the driver. this action provides a rapid turn off as current decays. features ? proportional gate drive ? turn-off propagation delay 15ns and turn-off time 20ns. ? detector threshold voltage ~10mv ? standby current 5ma ? suitable for discontinuous mode (dcm), critical conduction mode (crcm) and continuous mode (ccm) operation ? 5-15v v cc range applications ? flyback converters in: ? adaptors ? lcd monitors ? server psu?s ? set top boxes ? lcd tv ? resonant converters ? led tv ? high power adaptors ? street lighting ? atx psu pin out details typical configuration so-8 orderin g information synchronous mosfet controller markin g information zxgd 3103 y y w w zxgd = product type marking code, line 1 3103 = product type marking code, line 2 yy = year (ex: 11 = 2011) ww = week (01 - 53)
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 2 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated absolute maximum ratings parameter symbol limit unit supply voltage 1 v cc 15 v continuous drain pin voltage 1 v d -3 to180 v gateh and gatel output voltage 1 v g -3 to v cc + 3 v driver peak source current i source 2.5 a driver peak sink current i sink 6 a reference current i ref 25 ma bias voltage v bias v cc v bias current i bias 100 ma power dissipation at t a =25 c p d 490 mw operating junction temperature t j -40 to +150 c storage temperature t stg -50 to +150 c notes: 1. all voltages are relative to gnd pin. thermal resistance parameter symbol value unit junction to ambient (a) r ja 255 c/w junction to lead (b) r la 120 c/w notes: a. mounted on minimum 1oz weight copper on fr4 pcb in still air conditions. b. output drivers - junction to sol der point at end of the lead 5 and 6 esd rating model rating unit human body 2000 v machine 300 v
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 3 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated electrical characteristics at t a = 25c; v cc = 10v; r bias = 3.3k ? ; r ref = 4.3k? parameter symbol conditions min. typ. max. unit input and supply characteristics operating current i op v d -200m v - 2.16 - ma v d 0v - 5.16 - gate driver turn-off threshold voltage(**) v t v g = 1v, (*) -16 -10 0 mv gate output voltage (**) v g(off) v d 0v, (*) - 0.73 1 v v g v d = -50mv, ( g ) 6.0 7.2 - v d = -100mv, ( g ) 8.8 9.2 - v d -150mv, ( g ) 9.2 9.4 - v d -200mv, ( g ) 9.3 9.5 - switching performance (?) for q g (tot) = 82nc turn on propagation delay t d1 refer to switching waveforms in fig. 3 150 ns turn off propagation delay t d2 15 gate rise time t r 450 gate fall time t f continuous conduction mode 21 discontinuous conduction mode 17 notes: (**) gateh connected to gatel (*) r h = 100k ? , r l = o/c ( g ) r l = 100k ? , r h = o/c (?) refer to test circuit below
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 4 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated schematic symbol and pin out details pin no. name description and function 1 nc no internal connection 2 ref reference this pin is connected to v cc via resistor, r ref 3 gatel gate turn off this pin sinks current, i sink , from the synchronous mosfet gate. 4 gateh gate turn on this pin sources current, i source , to the synchronous mosfet gate. 5 v cc power supply this is the supply pin. it is recommended to decouple this point to ground closely with a ceramic capacitor. 6 gnd ground this is the ground reference point. connect to the synchronous mosfet source terminal. 7 bias bias this pin is connected to v cc via resistor, r bias . 8 drain drain connection this pin connects directly to the synchronous mosfet drain terminal.
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 5 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated typical characteristics 0 5 10 15 20 25 -5 -4 -3 -2 -1 0 1 -100 -80 -60 -40 -20 0 0 2 4 6 8 10 12 14 -100 -80 -60 -40 -20 0 0 2 4 6 8 10 -50 -25 0 25 50 75 100 125 150 -25 -20 -15 -10 -5 0 5 1k 10k 100k 10 100 0 2 4 6 8 10 12 14 16 18 20 22 0 20 40 60 80 100 current flow gate to ground current flow supply to gate gate current vs capacitive load peak current (a) capacitance (nf) v cc = 10v r bias =3k3 r ref =4k3 t = 25c see resistor table for values v cc = 15v v cc = 12v v cc = 10v v cc = 5v transfer characteristic v g gate voltage (v) v d drain voltage (mv) t = -40c t = 25c t = 85c t = 125c transfer characteristic v g gate voltage (v) v d drain voltage (mv) v cc = 10v r bias =3k3 r ref =4k3 100k pull down v cc = 10v r bias =3k3 r ref =4k3 v g = 1v 100k pull up drain sense voltage vs temperature v d drain voltage (mv) temperature (c) v cc = 10v r bias =3k3 r ref =4k3 d = 0.5 supply current vs frequency supply current (ma) frequency (hz) c load =22nf c load =10nf c load =4.7nf c load =2.2nf c load =1nf v cc = 5v v cc = 10v v cc = 12v v cc = 15v supply current vs capacitive load capacitance (nf) supply current (ma) r bias =3k3 r ref =4k3 d = 0.5 f=250khz
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 6 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated typical characteristics -0.5 0.0 0.5 1.0 1.5 -2 0 2 4 6 8 10 -40 -20 0 20 40 60 80 100 120 140 -2 0 2 4 6 8 10 -0.5 0.0 0.5 1.0 1.5 0.0 0.1 0.2 0.3 -40 -20 0 20 40 60 80 100 120 140 -4 -3 -2 -1 0 1 2 -50 -25 0 25 50 75 100 125 150 -2 0 2 4 6 v cc =10v r bias =3k3 r ref =4k3 c load =10nf v d switch on speed voltage (v) time ( s) v g v cc =10v r bias =10k r ref =4k7 c load =10nf v g v d switch off speed voltage (v) time (ns) v cc =10v r bias =3k3 r ref =4k3 c load =10nf gate drive on current gate current (a) time ( s) v cc =10v r bias =3k3 r ref =4k3 c load =10nf gate drive off current gate current (a) time (ns) v cc =10v r bias =3k3 r ref =4k3 c load =10nf t off = t d + t f switching vs temperature percent change time (%) temperature (c) t on = t d + t r
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 7 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated application information the purpose of the zxgd3103 is to drive a mosfet as a low-v f schottky diode replacement in offline power converters. when combined with a low r ds(on) mosfet, it can yield significant power efficiency improvement, whilst maintaining design simplicity and incurring minimal component count. figure 1 and 2 show typical configuration of zxgd 3103 for synchronous rectif ication in a flyback and a multiple output resonant converter. figure 1. example connections in flyback supply figure 2. example connections in llc supply
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 8 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated descriptions of the normal operation the operation of the device is desc ribed step-by-step with reference to the timing diagram in figure 3. 1. the detector monitors the mosfet drain-source voltage. 2. when, due to transformer action, the mosfet body diode is forced to conduct there is approximately - 0.8v on the drain pin. 3. the detector outputs a positive voltage with respect to ground, this voltage is then fed to the mosfet driver stage and current is so urced out of the gate pin. 4. the controller goes into proportional gate drive co ntrol ? the gate output voltage is proportional to the on-resistance-induced drain-source voltage drop across the mosfet. proportional gate drive ensures that mosfet conducts for majority of the conducti on cycle and minimizes body diode conduction time. 5. as the drain current decays linearly toward zero, pr oportional gate drive control reduces the gate voltage so the mosfet can be turned off rapidly at zero cu rrent crossing. the gate voltage is removed when the drain-source voltage crosses the detection threshol d voltage to minimize reverse current flow. 6. at zero drain current, the controlle r gate output voltage is pulled low to v g(off) to ensure that the mosfet is off. figure 4 shows typical operating waveforms for zxgd3103 driving a mosfet with q g(tot) = 82nc in a flyback converter operating in critical conduction mode. figure 3. timing diagram for a criti cal conduction mode flyback converter
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 9 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated typical waveforms fig 4a: critical conduction mode switch on speed -2 -1 0 1 2 3 4 5 6 7 8 9 10 -0.4 -0.2 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 ti me ( s) voltage (v) v g v d v cc = 10v r bi as = 3k3 r ref = 4k3 q g(tot) = 82nc fig 4b: typical switch on speed when driving a q g(tot) = 82nc mosfet switch off speed -2 -1 0 1 2 3 4 5 6 7 8 9 10 -0.05 -0.04 -0.03 -0.02 -0.01 0.00 0.01 0.02 0.03 0.04 0.05 time ( s) voltage (v) v g v d v cc = 10v r bi as = 3k3 r ref = 4k3 q g(tot) = 82nc fig 4c: typical switch o ff speed when driving a q g(tot) = 82nc mosfet
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 10 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated design considerations it is advisable to decouple the zxgd3103 closely to v cc and ground due to the possibility of high peak gate currents with a 1 f x7r type ceramic capacitor as shown in figure 2. the gate pins should be as close to the mosfet?s gate as possible. also the ground return loop should be as short as possible. to minimize parasitic inductance-induced premature turn-off issue of the synchronous controller always keep the pcb track length between zxgd3101?s drain input and mosfet?s drain to less than 10mm. low internal inductance mosfet packages such as so-8 and polarpak are also recommended for high switching frequency power conversion to minimize body diode conduction. r1, q1 d1 and c1 in figure 1 are only required as a series drop-down regulator to maintain a stable vcc around 10v from a power supply output voltage greater than 15v. external gate resistors are optional. they can be inserted to control the rise and fall time which may help with emi issues. the proper selection of external resistors r ref and r bias is important to the optimum device operation. select a value for resistor r ref and r bias from table 1 based on the desired vcc value. this provides the typical zxgd3103?s detection threshold voltage of 10mv. table 1. recommended resistor values for various supply voltages v cc r bias r ref 5v 1k6 2k0 10v 3k3 4k3 12v 3k9 5k1 15v 5k1 6k8
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 11 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated package outline and dimensions
zxgd3103n8 zxgd3103n8 document number: ds32255 rev. 2 - 2 12 of 12 www.diodes.com november 2011 ? diodes incorporated a product line o f diodes incorporated important notice diodes incorporated makes no warranty of any ki nd, express or implied, with regards to this document, including, but not limited to, the impl ied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries re serve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any pr oduct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product descri bed herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applications sha ll assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are repr esented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated products for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its represent atives harmless against all cl aims, damages, expenses, and attorney fees arising out of, directly or indirectly, any cl aim of personal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more unit ed states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or systems without the express written approval of the chief exec utive officer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expected to cause the failure of the life s upport device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory rami fications of their life support devices or systems, and acknowledge and agree that they are sole ly responsible for all legal, regulatory and safety-related requirements concerning their products and an y use of diodes incorporated products in such safety-critical, life support device s or systems, notwithstanding any devices- or systems-relat ed information or support that may be provided by diodes incorporated. further, customers must fully indemnify di odes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety-critical, life support devices or systems. copyright ? 2011, diodes incorporated www.diodes.com

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